Plasma Technology  

SEM

OPT application lab:
3 µm deep InP etch


RIE technology


Plasmalab System 100

InP Waveguide RIE Etching


Plasmalab 80 Plus


SEM

OPT application lab:
7 µm deep InP etch

Technology:
Parallel Plate Reactor
Shower Head Gas Inlet
13.56 MHz Plasma Excitation
Process:
CH4 / H2 based at room temperature
( CH4 / H2 / Cl2 based at ca. 200 °C can
   be used at 100 - 200 nm/ min.)

Rates :
 InP 30 - 60 nm/ min
 InGaAs 20-40 nm/ min
 GaAs 10-20 nm/ min
uniformity ±3% across 2” wafer
                  ±5% across table
profile > 85º
surface roughness < 3 nm RMS
mask selectivities:
 InP:SiO2 >15:1
 InP:SiNx >15:1
 InP:resist > 5:1

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