Plasma Technology  

at 40° C

at 100° C

ICP technology

at 170° C

at 170° C

Plasmalab System 100
with ICP source

Cl2 based InP ICP Etching


OPT Application lab:
Cl2/N2 ICP etch
at 0.25 µm/ min
selectivity to SiO2 > 10 : 1
wall angle > 85°


surface roughness < 5nm

low etch rate (~100nm/min) possible

The SEMs show the etch profiles at different
temperatures. The Ni mask is not removed.


with kind permission of
Dr Topaloglu, Prof Tegude
University Duisburg-Essen
Solid State Electronics Department (HLT)

InP etch rate vs
substrate electrode temperature


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