Plasma Technology  

Plasmalab System 100
ICP- RIE, with loadlock

OPT application lab:
2 µm deep Langasite etch

Langasite La3Ga5SiO14 ICP Etching

Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
RF driven substrate ectrode

depth:                 2 µm
etch rate:           44 nm/min
selectivity to PR 1.4 : 1

ICP schematic

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