Plasma Technology  

Plasmalab System 100
ICP- RIE, with loadlock



OPT application lab:
2 µm deep Langasite etch

Langasite La3Ga5SiO14 ICP Etching


Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
RF driven substrate ectrode


depth:                 2 µm
etch rate:           44 nm/min
selectivity to PR 1.4 : 1


ICP schematic

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