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Descuming

  • low etch rate

  • low CD loss (with good uniformity)

  • good reproducibility (short process)

  • good uniformity over 7" masks

  • PE mode

Quartz/ MoSiON Etch

  • Fluorine based process

  • quartz etch rate 30 - 50 nm/ min

  • selectivity  > 2 : 1 to resist

  • uniformity < ± 4 %

  • MoSiON etch rate 10 - 15 nm/min

Cr Etching

  • Chlorine based process

  • etch rate: 20 - 40 nm/ min

  • selectivity  > 1 : 1 to resist

  • selectivity  > 1 : 1 to quartz

  • uniformity < ± 6 %

PE mode schematic/ 9 kB anisotropic quartz etch/ 3 kB anisotropic Cr RIE/ 1 kB
Plasma Etch/ Planar Etch Mode

OPT/ RAL procect:
anisotropic quartz RIE

OPT/ RAL procect:
Cr RIE
link    Anisotropic Photoresist RIE
link    SiO2 Etching

link    0.3 µm high aspect ratio SiO2 RIE

Equipment:

link    Plasmalab 80 Plus   for descuming
link    Plasmalab 800 Plus   for descuming
link    Plasmalab System 90 Plus   with vacuum loadlock for Cr RIE and for quartz/ MoSiON RIE (separate chambers)
link    Plasmalab System 100 Cluster   for Cr RIE, quartz/ MoSiON RIE and descum (separate chambers)

Options:

Laser Interferometer for end point detection and in situ rate measurement
(integrated in PC Plus control) (SiGe RIE with laser)
Optical Emission for end point detection over wafers

link   Inductive Coupled Plasma Sources (ICP) for low energy etching