Plasma Technology  


Anisotropic Etch (80°) through
160 nm Mo/ 250 nm Au/ 30 nm Mo
(Photoresist mask not removed)

 

 

 


Anisotropic Etch (85°) of 200 nm Mo at 60 nm/ min,
photoresist stripped to be stripped in an ultrasonic batch

Results:
Rate : Mo 30 - 120 nm/min
Profile: anisotropic (80° - 87°)
Uniformity: + 5%
Selectivity to PR: 1 : 1

(left SEMs: Au is sputter etched with
Ar only at 7 nm/ min.)

 

Equipment:
Plasmalab 80 Plus/ 800 Plus
Plasmalab System 100 (Cluster)/ 133

Technology:
Mo: Fluor RIE

Mo Etching


RIE schematic

 

 


Plasmalab Sytem 100
RIE with vacuum loadlock

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