Raman spectrum shows formation of layered MoS2
Characteristic peaks at 385 cm-1 and 405 cm-1 confirm
the formation of the 2H phase of layered MoS2.
The thickness of the layers can be determined
by analyzing the difference in peak positions.
21 cm-1 indicates 2 layer growth.
EDS data confirms presence of Mo and S with very small Cl content.
Precursors : MoCl5 + H2S
growth temperature: 500 - 900ºC
The growth behaviour is dependant on the substrates and the seeds.
Sapphire and Al2O3 substrates are more suitable than SiO2.
The SEM image shows a continuous film of MoS2
on Sapphire substrate (scratched in the centre to reveal
the contrast between substrate and film)