Plasma Technology  

with kind permission of
TU Eindhoven

Growth rate/ cycle at 250° = 1 Å

negligible oxygen and carbon impurity levels

Crystallinity at 300° C:
2D MoS2, plane orientation
grain size: few to tens of nm

2D films with tuneable morphologies can be synthesized on
CMOS compatible SiO2/ Si substrates having in plane or
vertically standing orientation.
The 2D in plane morphology has potential applications in
nanoelectronics, while the 3D fin structures are ideal for catalysis
applications like water splitting.

see also: MoS2 CVD growth in the Nanofab



Increasing Raman peak separation as a function of number of layers

10 cycles = Monolayer signature

The Monolayer signature had been confirmed
by Raman spectroscopy as well as

MoS2 Growth at low temperatures in the FlexAl




Why remote plasma ALD ?

A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !

The remote plasma just cracks molecules,
so that very reactive species can be used
for the growth process.

Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.

In Oxford systems it is possible to run
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.


ALD schematic
valve between remote ICP source
and chamber,
spectroscopic ellipsometry optional








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