Plasma Technology  


31 nm wide lines etched in Si
HBr based process
highly anisotropic profile
neglegible trenching
etch mask: HSQ
selectivity Si : HSQ 4 : 1
r ate : 20 nm/ min
up 450 nm deep

27 nm wide lines etched in Si
450 nm deep

with kind permission
AMO Aachen, Mr Moormann, Dr Lemme


80 nm wide lines in Si
room temperature ICP process: SF6/ C4F8
rate 8 nm/min
selectivity to Ni mask > 30 : 1
uniformity < 3% over 100 mm

2 µm diameter holes in Si
room temperature ICP process: SF6/ C4F8
rate 15 nm/min

with kind permission
Josef Kouba, BESSY AZM

Nanoimprint template etching in Si



Reactive Ion Etching
with ICP source

 


Plasmalab System 100
with loadlock and ICP180 source

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