Plasma Technology  

OPT application lab:
0.5 µm Nb etchted by ICP
PR mask still in place


Plasmalab System 100
with vacuum loadlock
and ICP180 source


OPT application lab:
0.3µm Nb etchted by RIE
PR mask still in place

Nb Etching (RIE, ICP)


ICP technology

ICP
rate 150 nm/ min with PR mask
selectivity to underlaying SiO2 > 10 : 1
anisotropic profile
uniformity +/- 3 % (100 mm)


Plasmalab 80 Plus


RIE
Parallel Plate Reactor

RIE
rate 70 nm/ min with PR mask
and He cooling
selectivity to PR mask 1.1 : 1
selectivity to underlaying SiO2 2.2 : 1
anisotropic profile
uniformity +/- 3.5 % (100 mm)

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