Plasma Technology  


Ionfab 300 Plus
with vacuum loadlock


0.3 µm deep Ni etch
PR mask not removed

Ni Ion Beam Etching

Technology: Ion Beam Etching IBE
15 cm RF ion source for 4" wafer
30cm RF ion source for 6", 8" wafer
filamentless PBN
Helium backside cooling

Ni etch rate with PR mask ca 40 nm/ min
uniformity +/- 4 %
wall angle 85°

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