Plasma Technology  

System 100
with cassette handling and 2 ICP modules

PDMS etch : Depth 90µm, Profile 92° (controllable)
(Contamination due breaking the sample for analysis)

Polydimethylsiloxane (PDMS) Dry Etching

Plasmalab System 100/ 133
Plasmalab 80 Plus

Reactive Ion Etching
Inductive Coupled Plasma Source
He backside cooling

Etch rate: 1.2µm/min
Selectivity Cu mask: > 50:1
Uniformity: ±3.5% across 200mm wafer
Profile: 89-95° controllable
higher temperature lead to a re-entrant profile.

ICP RIE schematic

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