Plasma Technology  

 

High rate SiO2 PECVD over a 800 nm Al step
with excellent step coverage


SiN PECVD at 200 nm/ min


SiO PECVD at 1.200 nm/ min

Very high rate PECVD

Very high rate SiN

Rate: up to 0.5 µm/ min

Uniformity : + 3 %

SiH4 based PECVD

stress control

excellent rate reproducibility

good step coverage

excellent film quality

 


standard plasma clean
using CF4/ O2

high rate plasma clean
for high throughput

optical emission for endpoint detection

cassette systems:
plasma clean during wafer transfer

Plasmalab System 100
with vacuum loadlock
(high rate configuration)

 

PECVD

Very high rate SiO

Rate: up to 1.2 µm/ min

Uniformity : + 3 %

SiH4 based PECVD

Doping by B, P

excellent rate reproducibility

good step coverage

excellent film quality

 

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