Plasmalab System 100/ 133
Parallel Plate Reactor
Shower Head Gas inlet
SiH4 based process
LPCVD of polycrystalline silicon at 650°C
Rate : 2 nm/min ( 20 nm/ min for PECVD)
Uniformity: ca +/-5 % across 100 mm wafer
XRD and Raman analysis of the as deposited films
demonstrate the crystalline nature of the films:
grain sizes > 100 nm and a degree of crystallinity > 80 %.
The polysilicon films grow preferentially along <1 1 0>
orientation and crystallization occurs along <1 1 1> orientation.
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