Plasma Technology  

highly anisotropic etch

ICP - RIE



Plasmalab System 100
with loadlock and ICP source

Dry Development of Silylated Resist (ICP - RIE)


anisotropic etch


Technology:

-  Inductive Coupled Plasma-
   Reactive Ion Etching
-  Independent control of ion energy
   and ion current density
-  Very efficient substrate cooling

Results:
Rate : ca. 150 nm/min
Uniformity: + 4% (150 mm wafer)
Profile: anisotropic


Equipment:
Plasmalab 80 Plus
Plasmalab System 100/ 133

etched at OPT application lab, Yatton/ UK

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