Dr Rangelow uses the Plasmalab 80
system for Fluorine based RIE and
Microwave Downstream Etching and
another Plasmalab 80
RIE with Nitrogen
glove box for Chlorine based processes.
The anisotropic etch processes are
done on the Fluorine etcher.
The photo shows the Plasmalab 80 Plus,
which has replaced the Plasmalab 80.
with kind permission of:
Dr I Rangelow
** Nano-Resolution Tri-Level Process
RF biased Etching, Dr I.W. Rangelow,
Microelectronic Engineering 17 (1992)
349 - 352 (Elsevier)
array of 75 nm x 1 µm antennas
permanent switching between an
isotropic etch process and a
gases: O2, CHF3, CH4
rate 30 nm/ min
The SiON mask was etched before
in the same system.
The ICP technology has replaced the
MWDS technology used here originally
in 1994 - 1997, see MWDS.