Metal precursor: MeCpPtMe3
Delivery Method: bubbled with argon
Non-metal precursor: O2 thermal or plasma
The O2 plasma significantly reduces
the nucleation delay.
The initial thermal Pt nucleation process
is pressure dependent.
Radical assisted ALD results in a
much shorter nucleation delay.
H2 plasma can reduce PtO2 to Pt and
lowers temperature range of Pt deposition.
- 0.45 Å/cycle
- 7-8 sec cycle time
- Deposition rate ~ 0.3 - 0.4 nm /min
~ 18 - 24 nm /h
- Resistivity ~13 µOhm cm
with kind permission of TU Eindhoven
white paper on Pt ALD (2011)
Pt grown on textiles
Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !
The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.
Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.
In Oxford systems it is possible to
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.
valve between remote ICP source
spectroscopic ellipsometry optional