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2 µm deep Pt IBE etch

2 µm deep Pt IBE


Ionfab 300 Plus

Pt Ion Beam Etching (IBE)

Technology:
Etch Mode: IBE
Rotating substrate with adjustable tilt
Ion source: 15 cm, 13.56 MHz driven
Ion Optics: High Uniformity
Neutralisation: filamentfree PBN

Results:
Rate : 30 nm/min (no He-cooling)
Mask: Photoresist
Selectivity: 1.5 - 2.5:1
No ‘trenching“, no ’redeposition‘
Wall Angle: adjustable 30° - 85°
Uniformity: + 5% (100 mm)


rate vs beam energy

Reactive Ion Beam Etching RIBE


beam profile
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