Plasma Technology  


Optical fibre alignment trenches
etched in 35 µm PECVD SiO2
at 0.3 µm/ min
Al mask with 96 % coverage

110 µm deep quartz etch
at 0.25 µm/ min
> 70 : 1 selectivity to Cr mask
Cr mask coverage 85 %
vertical profile
clean base


Plasmalab System 100
with loadlock and ICP380 source

Deep Quartz etching by ICP


54 µm deep quartz etch
at 0.22µm/ min
55: 1 selectivity to Ni mask
vertical profile
clean base
(The "striations" are transferred from the Ni mask.)

 


ICP technology

Technology:
ICP (Inductively Coupled Plasma) source
with RF biasing of substrate electrode

13.56 MHz driven substrate electrode

Results:
Rate: 150 - 350 nm/min
Selectivity: 50 - 100 :1 to metal (Al, Cr, Ni)
Selectivity: 3 :1 to photoresist
Selectivity: 5 :1 to Si
Profile: anisotropic, smooth walls
90° wall with metal masks
Uniformity: ± 3%


OPT application lab:
25µm deep quartz etch


OPT application lab:
25µm deep quartz etch

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