Plasma Technology  

Plasmalab System 100
ICP- RIE, with loadlock


Lens etched in sapphire

OPT application lab:
30 µm diameter Al2O3 lens

Sapphire (Al2O3) Lens Etching


Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
RF driven substrate ectrode
Cl based process

Al2O3 etch rate : 100 - 300 nm/ min
good uniformity: +/- 2.5 % (2“)
very smooth surface


ICP schematic

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