The very thin passivation layer (< 5 nm) makes
sub-10 nm etching possible !
High selectivities to photoresist masks (> 15:1)
have been achieved.
The process is very clean and repeatable.
Very smooth sidewalls
The profile as well as the etch depth are quite sensitive
to etch parameters and the feature size.
-> download poster (
2.6 MB PDF file)
Pattern transfer of 13-nm
The SF6-O2 cryo etching process allows direct patttern transfer
into silicon using imprint resist as the mask
• Over 10:1 selectivity to resist can be achieved for cryo etch.
• Patterns from 80 nm down to sub-20 nm have been imprinted and
• 14 nm trenches were etched to a depth of 40 nm with HSQ resist
This results have been obtained at
Lawrence Berkeley National laboratory
in cooperation with OPT
Y. Wu, D.L Olynick, A. Goodyear,
C. Peroz, S. Dhuey, X. Liang, S. Cabrini