Plasma Technology  


50 nm lines and spaces/ 6 kB

OPT application lab: 
50 nm lines and spaces
etched 200 nm deep in Si


50 nm lines/ spaces

etch rate 60/ 40 nm/ min

selectivity to underlaying SiO2 > 200 : 1

anisotropic profile

HBr based 2 step process

etch depth up to 1 µm
at 5 : 1 aspect ratio


ICP RIE schematic/ 8 kB

ICP Technology

ICP Etching in Si: 50 nm lines and spaces


  100 nm lines and spaces/ 6 kB

OPT application lab: 
100 nm lines and spaces etched in Si


Plasmalab System 100 with ICP380 source and vacuum loadlock/ 6 kB

Plasmalab System 100
with ICP380

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