Plasma Technology  

SEM


Reactive Ion Etching
with ICP source


Plasmalab System 100
with loadlock and ICP180 source

Si ICP Etching for AFM Microscopy


SEM


Rate : ca 1 µm/ min
good uniformity over 4“ wafer
two step process: anisotropic/ isotropic
controllable profile

with kind permission of:
  Uni Kassel
  Technische Physik
 


SEM
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