Plasma Technology  


anisotropic single step Si etch/ 6 kB

OPT application lab:
anisotropic 8 µm deep etch


ICP technology/ 6 kB

Reactive Ion Etching
with Inductive Coupled Plasma Source (ICP)


cluster with ICP sources/ 9 kB

Plasmalab System 100
with ICP380 sources

Si Waveguide ICP Etching


Technology:

He backside cooling
room temperature process
single step process

Results:
Rate : 0.5 µm/min
Uniformity: < +/- 1% (4“)
vertical wall
smooth surface
selectivity to Resist > 8:1
selectivity to SiO2 > 20:1


smooth, anisotropic etch/ 5 kB

OPT application lab:
anisotropic 8 µm deep etch


smooth, anisotropic etch/ 4 kB

OPT application lab:
anisotropic 5 µm deep etch

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