Plasma Technology  

SEM

100 nm lines etched at 10 : 1 aspect ratio


Plasmalab System 100
with loadlock and ICP180 source

100 nm gratings etched in Si at 10 : 1 aspect ratio


Reactive Ion Etching
with ICP source


Rate : 230 nm/ min

good uniformity over 4“ wafer

good selectivity to e beam resist: 7.7 : 1

achieved at low substrate temperatures

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