Plasma Technology  


Uni Kassel:
0.36 µm wide wall, 48 µm high
aspect ratio 130 : 1


optimised conditions for both steps by "gas chopping"

Si Cylinder etched by Gas Chopping


Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
room temperature process
using gas chopping
He backside cooling

Results:
rate : 3- 5 µm/min with the ICP180
Rates up to 10 µm/ min are possible
with the larger ICP 380 source.
anisotropic etch
aspect ratio of isolated lines up to 130 : 1
selectivity to PR 300 - 1.000 : 1

with kind permission of Uni Kassel
Dr Rangelow, Mr Volland, Mr Ivanov


Uni Kassel:
50 µm deep etch


ICP layout

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