Plasma Technology  

SEM

40 µm deep Si etch


Reactive Ion Etching with ICP source


Plasmalab System 100
with loadlock and ICP180 source

Deep  Si  Etching   (ICP)


SEM

45 µm deep Si etch

-> show gas chopping principle

Rate : 2 - 3 µm/ min (ICP 180)
Rates up to 10 µm/ min are possible
with the larger ICP 380 source.
Selectivity to Photoresist > 100 : 1
Selectivity to SiO2 > 200 : 1
uniformity over 4“ wafer: +/- 4 %
highly anisotropic profile

with kind permission of:
  Uni Kassel
  Technische Physik
  Dr I Rangelow


SEM

55 µm deep Si etch

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