Si Etching

 

RIE  isotropic

Fluorine based process

etch rates: 0.5  -  10 m/ min

high selectivities

strong loading effect

isotropic 70 m deep etch in Si

Courtesy of IMO Wetzlar:
70 m deep isotropic etch
mask still intact

50 m deep Si etch

OPT Application lab:
50 m deep anisotropic low
temperature etch
for micromechanical devices

Si peaks for AFM

Courtesy of Uni Kassel
Si AFM peaks by RIE

Si nanopillars
Courtesy of
The University of Birmingham


RIE anisotropic

mostly Cl/ Br based process

etch rates:  50 - 300 nm/ min

anisotropic profile

good selectivity to SiO2

1 m deep anisotropic RIE in polySi using HBr

OPT Application lab:
1 m deep anisotropic polySi with HBr for very high selectivities


ICP - RIE

Fluorine based processes

rates: 1 - 20 m/ min

very high selectivities possible

aspect ratio dependent etching (RIE lag)

room temperature anisotropic etch for micromechanics

OPT Application lab:
50 m deep anisotropic room temperature etch
for micromechanical devices ("Bosch Process")

OPT application lab:
photonic crystals
5 µm holes etched in Si
with stop on SiO2

OPT application lab:
lenses etched into Si

link to homepage email to OPT