Plasma Technology  

Si needles etched by ICP

70 µm long Si needles etched
by the low temperature process

Plasmalab System 100
with loadlock and ICP180 source

Si Needles

Reactive Ion Etching
with ICP source

Reactive Ion Etching
Inductive Coupled Plasma Source
low temperature “cryo” process
He backside cooling

Rate : 2.5 µm/min
selectivity to SiO2 150 - 350 : 1
anisotropic etch
controllable wall profile

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