Plasma Technology  

Si needles etched by ICP

70 µm long Si needles etched
by the low temperature process


Plasmalab System 100
with loadlock and ICP180 source

Si Needles


Reactive Ion Etching
with ICP source


Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
low temperature “cryo” process
He backside cooling

Results:
Rate : 2.5 µm/min
selectivity to SiO2 150 - 350 : 1
anisotropic etch
controllable wall profile

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