Plasma Technology  


SiN channels, ca 50 µm deep,
by anisotropic deep Si etching

Buried Micro Channels in Si

Reactive Ion Etching
with ICP source

Plasmalab System 100
with loadlock and ICP180 source

Silicon nitride channels buried in a silicon wafer.
The process involves cryogenic silicon etching,
followed by an isotropic silicon etch (which does
not attack the sidewalls as they are still passivated).
Finally, a silicon nitride film is deposited by LPCVD
to close up the hole.

Plasmalab System 100/ 133 (Cluster)

Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control

with kind permission of:
TU Twente
Meint de Boer

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