Plasma Technology  

SEM

0.3 µm deep, anisotropic F RIE into Si


SEM

0.3 µm deep, anisotropic F RIE into Si


Plasmalab 80 Plus

Anisotropic Si RIE for a vertical MOSFET


RIE technology


Technology:
Reactive Ion Etching
13.56 MHz Plasma Excitation
Fluor based Process
Parallel Plate Reactor
Shower Head Gas Inlet

Results:
Rate : > 25 nm/ min
Uniformity: <= +/- 4.5 % (4")
anisotropic etch
smooth walls

(etch process: Uni Bochum,
Lehrstuhl für Elektronische Bauelemente
deposition processes: Universität der Bundeswehr,
Institut für Physik, Lehrstuhl für Mikrosystemtechnik
left SEM published in J. of Material Science)

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