Plasma Technology  

50 µm deep etch at high aspect ratios

Courtesy of Keith Ritala
Microfabrication Laboratory
Washington Technology Center

optimised conditions for both steps by "gas chopping"

Deep Si Etching for MEMS and Si tips (Bosch Process)

Reactive Ion Etching
Inductive Coupled Plasma Source
room temperature “Bosch” process
He backside cooling

Rate : 1 - 5 µm/min
Rates up to 10 µm/ min are possible
with the ICP 380 source.
anisotropic etch
aspect ratio up to 30 : 1
controllable wall profile

Si tips for field emission arrays
or AFM

250 µm deep anisotropic etch

Plasmalab System 100
with ICP Souce and loadlock

ICP layout

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