Plasma Technology  

stress vs 13 MHz power



Plasmalab 800 Plus

SiC PECVD


PECVD technology


Equipment:
Plasmalab 80 Plus/ 800 Plus
Plasmalab System 100/ 133

Technology:
Parallel Plate Reactor
Shower Head Gas inlet
SiH4 based process

Results:
Rate : > 50 nm/min
Uniformity:  ± 4 % over 200 mm
Reproducibility: ± 2 %
Stress: < 150 MPa
Refractive Index: ca 2.6 (2.4 - 2.7)
Good wet etch rate resistance

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