Plasma Technology  

SiC RIE etch

RIE etch of 200 nm SiC


Plasmalab 80 Plus

SiC Reactive Ion Etching (RIE)


SiC RIE etch

RIE etch of 200 nm SiC


RIE technology

rate : ca 100 nm/ min
uniformity: <= ± 3.5 % (4")
selectivity to PR: 1 : 1
anisotropic etch

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