Plasma Technology  


OPT application lab:
70 µm deep, anisotropic SiC via hole
at 650 nm/ min
using thick PR and He backside cooling

Reactive Ion Etching
with ICP source

Plasmalab System 100
with loadlock and ICP180 source

SiC Via Hole ICP Etching

OPT application lab:
10 µm deep etch at > 83° wall angle
> 0.3 µm/ min etch rate
selectivity to SU8 > 0.5 : 1
no trenching

OPT application lab:
3 µm deep, isotropic SiC etch


Plasmalab 80 Plus
Plasmalab System 100/ 133 (Cluster)

Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control
Fluorine based process


SiC backside thinning works from
2 µm/ min for single wafers up to
0.35 µm/ min for large batches (12 3" wafer)

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