Plasma Technology  


anisotropic 25 µm deep SiN etch/ 9 kB

OPT application lab:
25 µm deep, anisotropic SiN etch
 


Reactive Ion Etching
with ICP source


Plasmalab System 100
with loadlock and ICP180 source

SiN ICP Etching


ICP sources

ICP 65 for pieces and small wafer
ICP 180 for up to 4" - 6" wafers
ICP 380 for up to 6" - 8" wafers

Results:
Rate : 0.4 - 0.6 µm/ min
Selectivity to Photoresist 5 : 1 (isotropic)
 1.5 : 1 for the anisotropic process
Selectivity to SiO2 18 : 1 (isotropic)
 4 : 1 for the anisotropic process
high selectivity to metal mask
uniformity over wafer: +/- 3 %
anisotropic or controllable undercut


isotropic 5 µm deep SiN etch/

OPT application lab:
5 µm deep, isotropic SiN etch


Equipment:

Plasmalab 80 Plus
Plasmalab System 100/ 133 (Cluster)

Technology:
Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control
Fluorine based process

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