Plasma Technology  

SEM

Courtesy of Infineon:
0.15 µm SiN low damage spacer etching


System 100 cluster
with 2 ICP sources


ICP RIE technology

Low Damage Anisotropic SiN Spacer Etching over GaAs with HDP


SEM

Courtesy of Infineon:
0.15 µm SiN low damage spacer etching

 

first process step for excellent uniformity at ca 80 Volt

second process step for very low damage ca 5-20 Volt

uniformity  < Ī 2  % (100 mm wafer)

The ICP technology has replaced the ECR technology
used here originally in 1994 - 1997, see ICP vs ECR.

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