Plasma Technology  


Courtesy of NCTU:
top view of the 250 nm diameter holes


Plasmalab 80 Plus

Plasmalab 80 Plus


RIE schematic/ 8 kB

RIE technology

SiN Etching for Photonic Crystals



anisotropic mask definition
(RIE of SiN on a Plasmalab 80 Plus,
SiN deposited by PECVD
on a Plasmalab 80 Plus)


Waveguide and Resonator

with kind permission of
P Strasser, R Wuest, Dr F Robin
Communication Photonics Group
ETH Zurich, Switzerland
www.photonics.ee.ethz.ch

fabricated in
FIRST Lab (Dr O Homan, Dr E Gini)
ETH Zurich, Switzerland
www.first.ethz.ch


Courtesy of NCTU:
SiN etch rate 35 nm/ min
selectivity to PMMA > 1 : 1
highly anisotropic profile
uniform etch

Courtesy of NCTU:
SiN etch rate 35 nm/ min
selectivity to PMMA > 1 : 1
highly anisotropic profile
uniform etch

SiN is often used as an etch mask
for etching photonic crystals into
InP, GaAs etc.
This application requires a highly
vertical and uniform etch profile
with sufficient selectivity to PMMA
(typically).

RIE is preferred over ICP as it gives
a better selectivity to PR or PMMA


200 nm diameter holes in SiN
room temperature ICP process
rate 5 - 10 nm/min
selectivity to Ni mask > 30 : 1
uniformity < 3% over 100 mm

with kind permission
Josef Kouba, BESSY AZM

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