Plasma Technology  



Plasmalab 80 Plus

Si3N4 PECVD and RIE on platinized silicon pyramides

deposition rate: 10 - 20 nm/ min
etch rate: 30 - 80 nm/ min
uniformity < +/- 2 % (4" wafer)

Array of 20 x 20 pyramides with a lateral spacing of 50 µm and 25 µm in height
Fabrication in Si with anisotropic etching techniques. Pyramides are covered with a Pt film as electrode material and PECVD Si3N4 as a passivation layer. The microelectrodes are openend with an anisotropic RIE process using a photoresist mask.

PECVD and RIE at OPT application lab (UK)
device fabrication at the MST group of the
ICB research institute Muenster
SEM pictures taken at the University of Muenster

link to RIE technology page

Reactive Ion Etching

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