Plasma Technology  

Dr Fuchs uses his Ionfab 300 for ion beam etching
and deposition. The system is configured with
a filamentfree 15 cm ECR etch source and a
3 cm Kaufman source for deposition.

The photo and graph show the Ionfab 300 Plus
with RF sources, which has replaced the
Ionfab 300 installed in Jena.

with kind permission of:
Uni Jena, Inst. fuer Angewandte Physik, Dr J Fuchs

Process steps (with ion beam technology):
(a) Cr ion beam deposition
(b) ion beam etching of the Cr mask
(c) RIBE of the quartz


SEM

OPT Application Lab:
3.5 µm deep SiO2 CAIBE etch
with polyimide mask, > 85° slope


SEM

Uni Jena:
2.5 µm deep anisotropic quartz etch

SiO2 RIBE and Cr IBS


IBE/ RIBE/ CAIBE
technologies


SEM

Uni Jena:
2.5 µm deep anisotropic quartz etch


Ionfab 300 Plus

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