Plasma Technology  

quartz etch

OPT application lab:
rate 100 nm/ min in quartz
depth 1 µm, width 0.14 µm
selectivity to the Cr mask 32 : 1
uniformity over 8” < +/- 5 %


ICP technology


Plasmalab System 100
with loadlock and ICP380 source

0.15 µm SiO2 ICP Etching


OPT application lab:
0.5 hole in SiO2
depth 1.4 µm
rate 0.2 - 0.5 µm / min
selectivity to the Cr mask 30 - 70 : 1
(selectivity to PMMA: < 1: 1)


OPT application lab:
2 µm hole in SiO2
depth 1.4 µm
rate 0.2 - 0.5 µm / min
selectivity to the Cr mask 30 - 70 : 1
(selectivity to PMMA: < 1: 1)

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