Plasma Technology  

Plasmalab System 100
with ICP380


SiO2 photonic crystals etched by ICP

OPT application lab: ICP etch
100 nm holes etched in SiO2, 250 nm deep
rate 225 nm/ min, profile > 87°
selectivity 1.3 : 1 to ZEP520
no ARDE effect measurable


ICP Technology

Photonic Crystal Hole Etching in SiO2


SiO2 photonic crystals etched by RIE

OPT application lab: RIE etch
180 nm holes etched in SiO2, 250 nm deep
rate 25 nm/ min, profile > 85°
selectivity 2.25 : 1 to ZEP520
little ARDE effect measurable


RIE technology


Plasmalab 80 Plus

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