Plasma Technology  


OPT application lab:
etch rate, etch depth and rate variance vs process time

The laser interferometer provides depth control to +/- 0.25 µm
with automatic process end. The raw interference data is
processed to display continous real time etch etch rates and depth.
Here the plot identifies transitions between the BPSG upper clad/ Ge
doped core and the core/ undoped lower layers.


OPT application lab:
8 µm deep anisotropic etch


Plasmalab System 100
with loadlock and ICP380 source

Deep SiO2 Waveguide Etching by ICP


Technology:
Reactive Ion Etching (RIE)
with ICP source
13 MHz driven substrate electrode

Results:
Rate : 200 - 300 nm/ min
Uniformity: <= +/- 5% (6")
anisotropic etch with smooth walls
selectivities: 50 : 1 to Cr or Al
profile control 89 - 90į
no plasma clean during process
minimum 1.000 µm before mechanical clean
no notching at doped/ undoped SiO2 interfaces


ICP technology


OPT application lab:
excellent linewidth control

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