Plasma Technology  

Refractive Index vs gas flow ratio


PECVD

Plasmalab System 100
with vacuum loadlock

Ge doped SiO2 PECVD for Waveguides



Stress vs flow ratio

 


Rate: 100 - 350 nm/ min
Uniformity over 4”/6”/8”: + 1 / 1.5/ 3 %
SiH4 based PECVD
Doping by Ge, B, P
Rate Reproducibility: + 1.5 %
Refractive Index: 1.46 - 1.48
Difference: 0.2 - 1.3 %
Stress: < 100 MPa compr. (as depodited)/
  < 200 MPa after anneal
low N-H content for low losses at 1550 nm
Index Uniformity: + 0.001 after PECVD, 
                              + 0.0002 after anneal
Chamber cleaning by plasma only
Plasma Clean Interval > 100 Ám


SiO2 films with different refractive indices are used for optical waveguide manufacturing.

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