Plasma Technology  

 

SiH4 based ICP PECVD process

 

TEOS based ICP PECVD process


ICP - PECVD

SiO2 Gap Filling by ICP PECVD


PlasmaPro 100 with ICP300

 



Technology:
PECVD
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma
RF driven substrate electrode

Results:
Rate: >40 - 100 nm/ min
temperature 80 - 400 deg C
refractive index 1.46

The gap filling behaviour depends on the trench
width and aspec ratio.


Plasmalab 80 Plus
with ICP65

link to homepage email to OPT