Plasma Technology  

Current density (A\ cm2) vs
electrical field (MV\ cm)


Capacitance (F) vs Voltage (V)


ICP - PECVD

Low Temperature SiO2 ICP - PECVD


   Plasmalab System 100 with ICP380

 



Technology:
PECVD
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma
RF driven substrate electrode

Results:
Rate: > 5 nm/ min
temperature < 120 deg C
lift off compatible
refractive index 1.46
breakdown voltage > 8 MV/ cm
uniformity < +/- 4 % ( 100 mm wafer with ICP 380)


Plasmalab 80 Plus
with ICP65

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