Plasma Technology  

SEM

anisotropic etch through several layers


ICP - RIE technology


Plasmalab 80 Plus
with ICP65 source

Low Damage, anisotropic SiO2 ICP etching for Failure Analysis


SEM

anisotropic etch on an 8" wafer
(using the ICP 380)


typical results with the ICP 65 (on chips):

 

Technology:

Reactive Ion Etching
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma 
RF driven substrate electrode

Results:

anisotropic profile
clean etch surface
low ion induced damage
suitable for 5 level metalisation
little attack of the Al lines


laser end point trace - etching TEOS then Coral
to expose the underlaying layer
red line = signal, blue line = first derivative

Polyimide
rate > 100 nm/ min
selectivity to SiN > 15 : 1

SiN depassivation
rate 100 nm/ min
selectivity to TEOS and SiC 1.5 : 1

SiC
rate up to 140 nm/ min
selectivity to TEOS 1.4 : 1
to low k dielectrics 0.7 : 1

SiO ILD (BPSG, TEOS)
rate up to 100 nm/ min
selectivity to low k dielectrics 0.5 : 1
0.7 : 1 to SiC

SiOC:H low k dielectrics
('Coral', 'Black Diamond')
rate up to 180 nm/ min
selectivity to TEOS 2 : 1
1.3 : 1 to SiC

'silk' spin on resist
rate up tp 400 nm/ min


Plasmalab System 100
with loadlock and ICP380 source

SEM

anisotropic etch


SEM

anisotropic etch on an 8" wafer
at low ion induced damage

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