PECVD of Dielectrics

 

PECVD

SiH4, NH3, N2O based processes

Refractive index: 1.46 - 2.20 (SiOxNy)

wide range of applications

excellent uniformity over large batches

2 Ám SiO2 PECVD

OPT Application lab:
2 Ám SiO2
over an overhanging feature

1.5 Ám conformal SiN PECVD with low stress

Courtesy of IMO Wetzlar
1.5 Ám low stress Si3N4
over a 1.5 Ám step

10 µm BPSG after single
tep anneal (950 °C)

 


HDP - PECVD

SiH4, N2 bases processes for SiN

low deposition temperatures

compatible with lift off technology

ICP ("High Density Plasma")

HDP PECVD of Si3N4 at low temperatures

OPT Application lab:
400 nm Si3N4
over a 3 Ám step at < 100░ C

SiO2 / Si3N4 mulilayer
deposited over a 5 micron step
ICP - PECVD


Remote PECVD

SiH4, N2O bases processes for SiO2

low damage process

plasma not in contact with the substrate

ICP configured as remote source

200 nm SiO2 by remote PECVD

Courtesy of RWTH Aachen
200 nm SiO2
with very high electrical quality

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