Plasma Technology  

Si emitter array of 25.000 tips
by dry etching with gas chopping
after oxidation and etching


etched at - 50° C using gas chopping
tip radii of 2 - 10 nm possible
after oxidation sharpening


Plasmalab System 100
with ICP source
and vacuum loadlock

ultrasharp Si tips by ICP etching for field emission arrays


self aligned volcano-type gate field emitter
coated with ICP-PECVD DLC


Si emitter array of 25.000 tips
by dry etching with gas chopping
after oxidation and etching

 


Incuctive Coupled Plasma
(ICP)

with kind permission of:
  Uni Kassel
  Technische Physik

 

 

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