Plasma Technology  

anisotropic Si etch

21 µm deep anisotropic etch stopping on SiO2

Reactive Ion Etching with ICP source

Plasmalab System 100
with loadlock and ICP180 source

Si ICP Etching for SOI technology

ICP sources

ICP 65 for pieces and small wafer
ICP 180 for up to 4" - 6" wafers
ICP 380 for up to 6" - 8" wafers

-> show gas chopping principle

Rate : 1µm/ min by ICP180
Rates up to 10 µm/ min are possible
with the larger ICP 380 source.
uniformity over 4" wafer ± 4%(ICP180)
selectivity to SiO2 underneath > 100: 1

SEM's supplied by an OPT user

anisotropic Si etch

three step Bosch process

Plasmalab System 80 Plus
Plasmalab System 100/ 133 (Cluster)

Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control
Fluorine based 3 step process
gas chopping

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