Plasma Technology  

0.5 µm Au sputter etch

OPT application lab:
0.5 µm Au etch


1 µm Au sputter etch

OPT application lab:
1 µm Au etch


Plasmalab System 100
single wafer RIE/ ICP


Plasmalab 800 Plus
large "RIE" batch system

Pt, Au, Ni sputter etching in "RIE" or ICP systems


120 nm Pt/Ti sputter etch

OPT application lab:
120 nm Pt etch
(and 400 nm PZT RIE),
PR mask intact

An enhanced rate by reactive gases can
be achieved at elevated temperatures:
Ar/ Cl2 ICP etch

 


1.4 µm Ni sputter etch

OPT application lab:
1.4 µm Ni etch
(PR Mask intact)

 

Pt >10 nm/ min ("RIE" by Ar sputter etching)
Pt >50 nm/ min ("ICP" by Ar sputter etching)
Au >40 nm/ min ("RIE" by Ar sputter etching)
Au >120 nm/ min ("ICP" by Ar sputter etching)
Ni >   8 nm/ min ("RIE" by Ar sputter etching)
selectivity to PR mask   ca 1 : 1 in "RIE"
uniformity in "RIE" (12 wafer batch) < +/- 7 %
uniformity in "RIE" or "ICP"
(single wafer 4"/ 6") < +/- 4 /5  %

For some (less demanding) applications
a parallel plate reactor ("RIE”) is the preferred
choice over an ion beam system because
of its better throughput / cost.

 

 

 

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